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60N60 Detail Informations

This is one of the IGBT types. The IGBT is insulated-gate bipolar transistor. Part Number : 60N60FD1

Function : 600V, 60A, IGBT Package : TO-3P, TO-247 Type

Manufacturers : Hangzhou Silan Microelectronics ( http: //www.silan.com.cn ) Images : 60N60FD1 transistor datasheet

Description

: 60N60FD1 insulated gate bipolar transistor with field stop (Field Stop) Process production, with low conduction loss and switching loss, the product can be applied to UPS, SMPS and PFC and other fields.

Features 1. 60A, 600V, VCE(sat) (typical value)=2.2V@IC=60A 2. Low conduction loss 3. Fast switching speed 4. High input impedance Pinout 60N60FD1 igbt data

Absolute maximum ratings ( Tc=25°C ) 1. Collector-emitter voltage : VCE = 600 V 2. Gate-emitter voltage : VGE = ±20 V 3. Collector current : 120 A 4. Collector pulse current : ICM = 180 A 5. Power dissipation : PD = 321 W 6. Operating junction temperature range : TJ = -55～+150 °C 7. Storage temperature range : Tstg = -55～+150 °C Other data sheets within the file : SGT60N60FD1PN, SGT60N60FD1P7

60N60FD1 IGBT Datasheet (Transistor)

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This post explains for the IGBT 60N60. The Part Number is IXGN60N60. The function of this semiconductor is 600V, 100A, IGBT.

Manufacturers : IXYS Corporation Preview images : 1 page 60N60 image

Description

: This is 600V, Insulated-gate bipolar transistor.

Features :

1. International standard package SOT-227B 2. Aluminium nitride isolation - high power dissipation 3. Isolation voltage 3000 V~ 4. Very high current, fast switching IGBT 5. Low VCE(sat) for minimum on-state conduction losses 6. MOS Gate turn-on drive simplicity 7. Low collector-to-case capacitance (< 50 pF) 8. Low package inductance (< 5 nH) - easy to drive and to protect Applications 1. AC motor speed control 2. DC servo and robot drives 3. DC choppers 4. Uninterruptible power supplies (UPS) 5. Switch-mode and resonant-mode power supplie [...] 2 page pinout