Part Number : 30G120ASW
Function : N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Package : TO-3P Type Manufacturers : Advanced Power Electronics Corp Image : Description : This is 1200V, 30A, N-Channel IGBT. Features : 1. High Speed Switching 2. Low Saturation Voltage : Typical V CE(sat) = 2.9V at Ic = 30A 3. RoHS-compliant, halogen-free TO-3P package 4. Internal "Co-Pak" Fast Recovery Diode Pinouts : Absolute Maximum Ratings (Ta = 25°C) 1. Collector to emitter voltage : Vces = 1200 V 2. Gate to emitter voltage : Vges = ± 30 V 3. Continuous Collector Current : Ic = 30 A (Tc = 100°C) 4. Maximum Power dissipation : Pd = 208 W 5. Junction temperature : Tj = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C 30G120ASW Datasheet PDF DownloadDatasheet Download : [ AP30G120ASW-HF-3.PDF ] Related articles across the web |
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